s mhop microelectronics c orp. a symbol v ds v gs i dm a i d units parameter 200 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) typ 200v 15a 190 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a www.samhop.com.tw oct,29,2013 1 details are subject to change without notice. t c =25 c g s d g s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) s t d s e ri e s to - 2 5 1 ( i - p a k ) w p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 1.6 c/w thermal resistance, junction-to-case r jc t c =70 c a t c =70 c w 15 44 78 12 50 ver 1.0 STU15N20 std15n20 green product e as mj single pulse avalanche energy d 64 a e
symbol min typ max units bv dss 200 v 1 i gss 100 na v gs(th) v 190 g fs s c iss 1615 pf c oss 85 pf c rss 64 pf q g 35 nc 31 54 16 t d(on) 21.4 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =100v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =7.5a v ds =10v , i d =7.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =160v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =10ma reverse transfer capacitance on characteristics 235 c f=1.0mhz c www.samhop.com.tw oct,29,2013 2 v sd nc q gs nc q gd 2.7 7.2 gate-drain charge gate-source charge diode forward voltage v ds =100v,i d =1a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =5a 0.81 1.3 v v ds =100v,i d =1a,v gs =10v 123 8 STU15N20 std15n20 ver 1.0 notes _ _ a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) e.drain current limited by maximum junction temperature. _
www.samhop.com.tw oct,29,2013 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 15 12 9 6 0 0 0.5 1 1.5 2 2.5 10 8 6 4 2 0 0 1 6 5 4 3 2 tj=125 c -55 c 25 c 420 350 280 210 140 70 1 2.5 2.2 1.9 1.6 1.3 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =7.5a 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =10ma 3 v gs =10v 0.1 15 12 9 6 3 0.4 STU15N20 std15n20 ver 1.0 3 v gs =10v v gs =4v v gs =5v v gs =6v
www.samhop.com.tw oct,29,2013 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 110 100 10 100 1000 900 750 600 450 300 150 0 10 0 125 c 75 c 25 c i d =7.5a 10 1 20 ciss coss crss 2400 2000 1600 1200 800 400 0 10 15 20 25 30 0 5 0.1 1 10 100 100 10 1 0.1 r d s (o n ) limit 10 8 6 4 2 0 v ds =100v i d =1a 8 6 4 2 0 24 21 18 15 12 9 6 3 0 1.00 0.75 0.50 0.25 1.25 125 c 25 c 75 c STU15N20 std15n20 ver 1.0 tf td(on) tr v gs =10v single pulse t c =25 c 1000 1ms 100us 10us dc 10m s td(off ) vds=100v,id=1a vgs=10v
t p v (br )dss i as figure 13b. www.samhop.com.tw oct,29,2013 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datas heet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse unclamped inductive waveforms figure 13a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - dd 20v v STU15N20 std15n20 ver 1.0
www.samhop.com.tw oct,29,2013 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 10.830 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 11.430 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.426 0.450 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035 ver 1.0 STU15N20 std15n20
www.samhop.com.tw 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067 ver 1.0 oct,29,2013 STU15N20 std15n20
www.samhop.com.tw oct,29,2013 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h ver 1.0 STU15N20 std15n20
www.samhop.com.tw 9 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) STU15N20 smc internal code no. (a,b,c...z) ver 1.0 STU15N20 std15n20 oct,29,2013
www.samhop.com.tw 10 top marking definition to-251 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) std15n20 smc internal code no. (a,b,c...z) ver 1.0 oct,29,2013 STU15N20 std15n20
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